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BDY58S Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY58S
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 125V(Min)
·High Power Dissipation
·Low Collector Saturation Voltage
APPLICATIONS
·LF signal power amplification.
·High current fast switching
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
160
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
25
A
IB
Base Current-Continuous
6
A
PC
Collector Power Dissipation @TC=25â
175
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature Range
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.0
â/W
isc websiteï¼www.iscsemi.com
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