BDY57 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTORS DIFFUSED MESA

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDY57 BDY58
DESCRIPTION
With TO-3 package
High current capability
Fast switching speed
APPLICATIONS
For use in low frequency large
signal power amplifications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
BDY57
BDY58
Open emitter
V_CEO
Collector-emitter voltage
BDY57
BDY58
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_T
Total power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
120
160
80
125
10
25
6
175
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
MAX
1.0
UNIT
/W