BDX66C Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX66C
DESCRIPTION
With TO-3 package
DARLINGTON
High current
APPLICATIONS
Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current(peak)
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-120
-120
-5
-16
-20
-0.25
150
-55~200
-55~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
MAX
1.17
UNIT
/W