BDW24 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDW24/A/B/C
DESCRIPTION
·Collector Current -I_C= -6A
·High DC Current Gain-h_FE= 750(Min)@ I_C= -2A
·Complement to Type BDW23/A/B/C
APPLICATIONS
·Designed for hammer drivers, audio amplifiers applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW24
-45
BDW24A
-60
V_CER
Collector-Emitter
Voltage
V
BDW24B
-80
BDW24C
-100
BDW24
-45
BDW24A
-60
V_CEO
Collector-Emitter
Voltage
V
BDW24B
-80
BDW24C
-100
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-6
A
I_CM
Collector Current-Peak
-8
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-0.2
A
50
W
150
℃
-65~150 ℃
isc Website：www.iscsemi.cn