BDV66 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(16A,60-100V,125W)

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDV66/A/B/C
DESCRIPTION
·Collector Current -I_C= -16A
·Collector-Emitter Saturation Voltage-
: V_CE(sat)= -2.0V(Max.)@ I_C= -10A
·Complement to Type BDV67/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDV66
-80
V_CBO
Collector-Base
Voltage
BDV66A
-100
V
BDV66B
-120
BDV66C
-140
BDV66
-60
V_CEO
Collector-Emitter
Voltage
BDV66A
-80
V
BDV66B
-100
BDV66C
-120
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-16
A
I_CM
Collector Current-Peak
-20
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-0.5
A
175
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
0.625 ℃/W
isc Website：www.iscsemi.cn