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| BDT41F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·DC Current Gain -hFE = 30(Min)@ IC= 0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF
80V(Min)- BDT41BF; 100V(Min)- BDT41CF
·Complement to Type BDT42F/AF/BF/CF
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
BDT41F
80
BDT41AF
100
VCBO
Collector-Base Voltage
V
BDT41BF
120
BDT41CF
140
BDT41F
40
VCEO
Collector-Emitter
Voltage
BDT41AF
60
V
BDT41BF
80
BDT41CF
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IBB
Base Current
PC
Collector Power Dissipation
TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
3
A
32
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
6.3
UNIT
â/W
isc Product Specification
BDT41F/AF/BF/CF
isc Websiteï¼www.iscsemi.cn
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