BDT41 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·DC Current Gain -h_FE = 30(Min)@ I_C= 0.3A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A
80V(Min)- BDT41B; 100V(Min)- BDT41C
·Complement to Type BDT42/42A/42B/42C
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT41
80
BDT41A
100
V_CBO
Collector-Base Voltage
V
BDT41B
120
BDT41C
140
BDT41
40
BDT41A
60
V_CEO
Collector-Emitter Voltage
V
BDT41B
80
BDT41C
100
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
6
A
I_CM
Collector Current-Peak
10
A
I_BB
Base Current
P_C
Collector Power Dissipation
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
3
A
65
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.92
70
UNIT
℃/W
℃/W
isc Product Specification
BDT41/A/B/C
isc Website：www.iscsemi.cn