BDT31 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDT31/A/B/C
DESCRIPTION
·DC Current Gain -h_FE = 25(Min)@ I_C= 1.0A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A
80V(Min)- BDT31B; 100V(Min)- BDT31C
·Complement to Type BDT32/A/B/C
APPLICATIONS
·Designed for use in audio output stages and general amplifier
and switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BDT31
80
BDT 31A
100
V_CBO Collector-Base Voltage
V
BDT 31B
120
BDT 31C
140
BDT31
40
BDT 31A
60
V_CEO Collector-Emitter Voltage
V
BDT 31B
80
BDT 31C
100
V_EBO Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
3
A
I_CM
Collector Current-Peak
5
A
I_BB
Base Current
P_C
Collector Power Dissipation
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Ttemperature Range
1
A
40
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
3.12
70
UNIT
℃/W
℃/W
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