BDT30 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION
·DC Current Gain -h_FE = 40(Min)@ I_C= -0.4A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A
-80V(Min)- BDT30B; -100V(Min)- BDT30C
·Complement to Type BDT29/A/B/C
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT30
-80
BDT30A -100
V_CBO Collector-Base Voltage
V
BDT30B -120
BDT30C -140
BDT30
-40
BDT30A
-60
V_CEO Collector-Emitter Voltage
V
BDT30B
-80
BDT30C -100
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-1
A
I_CM
Collector Current-Peak
-3
A
I_BB
Base Current
Collector Power Dissipation
P_C
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Ttemperature Range
-0.4
A
30
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
4.17 ℃/W
Thermal Resistance,Junction to Ambient 70 ℃/W
isc Product Specification
BDT30/A/B/C
isc Website：www.iscsemi.cn