BDT29F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDT29F/AF/BF/CF/DF
DESCRIPTION
·DC Current Gain -h_FE = 40(Min)@ I_C= 0.4A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF
80V(Min)- BDT29BF; 100V(Min)- BDT29CF
120V(Min)- BDT29DF
·Complement to Type BDT30F/AF/BF/CF/DF
APPLICATIONS
·Designed for use in audio output stages , general purpose
amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BDT29F
80
V_CBO
Collector-Base
Voltage
BDT29AF
100
BDT29BF
120
V
BDT29CF
140
BDT29DF
160
BDT29F
40
V_CEO
Collector-Emitter
Voltage
BDT29AF
60
BDT29BF
80
V
BDT29CF
100
BDT29DF
120
V_EBO Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
1
A
I_CM
Collector Current-Peak
3
A
I_BB
Base Current
P_C
Collector Power Dissipation
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Ttemperature Range
0.4
A
19
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
9.17
55
UNIT
℃/W
℃/W
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