BD945 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD943/945/947
DESCRIPTION
·DC Current Gain-
: hFE= 85(Min)@ IC= 500mA
·Complement to Type BD944/946/948
APPLICATIONS
·Designed for use in audio output stages and general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BD943
22
VCBO
Collector-Base Voltage BD945
32
BD947
45
BD943
22
VCEO
Collector-Emitter Voltage BD945
32
BD947
45
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
5
ICM
Collector Current-Peak
8
IB
Base Current-Continuous
1
PC
Collector Power Dissipation
@ TC=25℃
40
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.12 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W
isc website：www.iscsemi.com
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