BD943F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD943F/945F/947F
DESCRIPTION
·DC Current Gain-
: h_FE= 85(Min)@ I_C= 500mA
·Complement to Type BD944F/946F/948F
APPLICATIONS
·Designed for use in audio output stages and general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD943F
22
V_CBO
Collector-Base Voltage BD945F
32
V
BD947F
45
BD943F
22
V_CEO
Collector-Emitter Voltage BD945F
32
V
BD947F
45
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
5
A
I_CM
Collector Current-Peak
8
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
1
A
22
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
7.93 ℃/W
isc Website：www.iscsemi.cn