BD934 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD934/936/938/940/942
DESCRIPTION
·DC Current Gain-
: h_FE= 40(Min)@ I_C= -150mA
·Complement to Type BD933/935/937/939/941
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
BD934
-45
BD936
-60
V_CBO
Collector-Base Voltage BD938
-100
BD940
-120
BD942
-140
BD934
-45
BD936
-60
V_CEO
Collector-Emitter Voltage BD938
-80
BD940
-100
BD942
-120
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current-Continuous
-3
I_CM
Collector Current-Peak
-7
I_BB
Base Current-Continuous
-0.5
P_C
Collector Power Dissipation
@ T_C=25℃
30
T_J
Junction Temperature
150
T_stg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
4.17 ℃/W
Thermal Resistance,Junction to Ambient 70 ℃/W
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