BD906 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD906
DESCRIPTION
·DC Current Gain -
: h_FE = 40(Min.)@ I_C= -0.5A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= -45V(Min)
·Complement to Type BD905
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
V_CBO
Collector-Base Voltage
-45
V_CEO
Collector-Emitter Voltage
-45
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current-Continuous
-15
I_CM
Collector Current-Peak
-20
I_BB
Base Current
-5
P_C
Collector Power Dissipation
@ T_C=25℃
90
T_J
Junction Temperature
150
T_stg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.38 ℃/W
isc Website：www.iscsemi.cn