BD895 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD895/897/899/901
DESCRIPTION
With TO-220C package
Complement to type BD896/898/900/902
DARLINGTON
APPLICATIONS
For use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BD895
V_CBO
Collector-base voltage
BD897
BD899
BD901
BD895
V_CEO
BD897
Collector-emitter voltage
BD899
BD901
V_EBO
Emitter-base voltage
I_C
Collector current-DC
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_a=25
VALUE
45
60
80
100
45
60
80
100
5
8
300
70
2
150
-65~150
UNIT
V
V
V
A
mA
W