BD825 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN power transistors

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD825
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min)
·High DC Current Gain
·Low Saturation Voltage
·Complement to Type BD826
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for driver-stages in hi-fi amplifiers and
television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.0
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
1.5
A
2
W
10
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150
℃
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
12.5 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}