BD809 Datasheet, PDF (1/3 Pages) ON Semiconductor – POWER TRANSISTORS PNP SILICON

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD809
DESCRIPTION
With TO-220C package
Complement to type BD810
DC current gain
: h_FE = 30 (Min) @ I_C = 2.0 Adc
APPLICATIONS
Designed for use in high power audio
amplifiers utilizing complementary or
quasi complementary circuits.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
80
80
5
10
6
90
150
-55~150
UNIT
V
V
V
A
A
W
MAX
1.39
UNIT
/W