BD807 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD807
DESCRIPTION
·DC Current Gain -
: h_FE = 30(Min.)@ I_C= 2A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 60V(Min)
·Complement to Type BD808
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
70
V
V_CEO
Collector-Emitter Voltage
60
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
10
A
I_BB
Base Current
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
6
A
90
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.39 ℃/W
isc Website：www.iscsemi.cn