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BD801 Datasheet, PDF (1/2 Pages) Motorola, Inc – Plastic High Power Silicon NPN Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD801
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Low Saturation Voltage
·Complement to Type BD802
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
TC=25â
Tj
Junction Temperature
Tstg
Storage Ttemperature Range
3
A
65
W
150
â
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.92 â/W
isc Websiteï¼www.iscsemi.cn
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