BD800 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD800
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = -80V(Min)
·Low Saturation Voltage
·Complement to Type BD799
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-80
V
V_CEO Collector-Emitter Voltage
-80
V
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-8
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Ttemperature Range
-3
A
65
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.92 ℃/W
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