BD791 Datasheet, PDF (1/2 Pages) ON Semiconductor – POWER TRANSISTOR SILICON

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD791
DESCRIPTION
·High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min)
• High DC Current Gain @ IC = 200 mAdc
hFE = 40–250
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc
•
APPLICATIONS
·Designed for low power audio amplifier and low current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
1
A
15
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
8.34 ℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}