BD788 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD788
DESCRIPTION
·DC Current Gain-
: h_FE= 40~250(Min)@ I_C= -0.2A
·Collector-Emitter Sustaining Voltage -
: V_CEO(SUS)= -60V(Min)
·Complement to type BD787
APPLICATIONS
·Designed for low power audio amplifier and low current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-80
V
V_CEO
Collector-Emitter Voltage
-60
V
V_EBO
Emitter-Base Voltage
-6
V
I_C
Collector Current-Continuous
-4
A
I_CM
Collector Current-Peak
-8
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-1
A
15
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
8.34 ℃/W
isc Website：www.iscsemi.cn