BD751B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD751B/751C
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 100V(Min)- BD751B
= 130V(Min)- BD751C
·High Power Dissipation
·Complement to Type BD750B/750C
APPLICATIONS
·Designed for high voltage and high power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BD751B 110
V_CEV Collector-Emitter Voltage
V
BD751C 140
BD751B 100
V_CEO(SUS) Collector-Emitter Voltage
V
BD751C 130
V_EBO Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
20
A
I_BB
Base Current-Continuous
5
A
P_C
Collector Power Dissipation@T_C=25℃ 250
W
T_J
Junction Temperature
200
℃
T_stg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
0.875
UNIT
℃/W
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