BD746 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD746/A/B/C
DESCRIPTION
·With TO-3PN package
·Complement to type BD745/A/B/C
·High current capability
·High power dissipation
APPLICATIONS
·For use in power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
·
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BD746
V_CBO
Collector-base voltage
BD746A
BD746B
Open emitter
BD746C
BD746
V_CEO
Collector-emitter voltage
BD746A
BD746B
Open base
BD746C
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_C=25℃
T_a=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-50
-70
-90
-110
-45
-60
-80
-100
-5
-20
-25
-7
115
3.5
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃