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BD744C Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD744C
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·Collector Power Dissipation-
: PC= 90W@ IC= 25â
·15A Continuous Collector Current
·Complement to Type BD743C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-110
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-15
ICM
Collector Current-Peak
-20
IBB
Base Current-Continuous
-5
Collector Power Dissipation
PC
@ Ta=25â
2
Collector Power Dissipation
@ TC=25â
90
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
â
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
1.4 â/W
Thermal Resistance, Junction to Ambient 62.5 â/W
isc Websiteï¼www.iscsemi.cn
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