BD743C Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD743C
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 100V(Min)
·Collector Power Dissipation-
: P_C= 90W@ I_C= 25℃
·15A Continuous Collector Current
·Complement to Type BD744C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
V_CBO
Collector-Base Voltage
110
V_CEO
Collector-Emitter Voltage
100
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current-Continuous
15
I_CM
Collector Current-Peak
20
I_BB
Base Current-Continuous
5
Collector Power Dissipation
P_C
@ T_a=25℃
2
Collector Power Dissipation
@ T_C=25℃
90
T_J
Junction Temperature
150
T_stg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
1.4 ℃/W
Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc Website：www.iscsemi.cn