|
BD736 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
|
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD736
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -20mA
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -35V(Min.)
·Complement to Type BD735
APPLICATIONS
·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-35
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-7
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-1
A
2
W
40
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
|
▷ |