BD725 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD725
DESCRIPTION
·DC Current Gain-
: h_FE= 40@ I_C= 0.5A
·Collector-Emitter Breakdown Voltage -
: V_(BR)CEO= 120V(Min)
·Complement to type BD726
APPLICATIONS
·Designed for use in audio output and general purpose
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
V_CBO
Collector-Base Voltage
120
V_CEO
Collector-Emitter Voltage
120
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current-Continuous
4
I_CM
Collector Current-Peak
7
I_BB
Base Current-Continuous
1
P_C
Collector Power Dissipation
@ T_C=25℃
30
T_J
Junction Temperature
150
T_stg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
3.5 ℃/W
Thermal Resistance,Junction to Ambient 100 ℃/W
isc Website：www.iscsemi.cn