BD708 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD708 BD710 BD712
DESCRIPTION
With TO-220C package
Complement to type BD707/709/711
APPLICATIONS
Intented for use in power linear
and switching applications.
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BD708
V_CBO
Collector-base voltage
BD710
BD712
BD708
V_CEO
Collector-emitter voltage BD710
BD712
V_EBO
Emitter-base voltage
I_C
Collector current-DC
I_CM
Collector current-Pulse
I_B
Base current
P_T
Total dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-60
-80
-100
-60
-80
-100
-5
-12
-18
-5
75
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
1.67
UNIT
/W