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BD706 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD706
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -0.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -45V(Min.)
·Complement to Type BD705
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-45
V
VCES
Collector-Emitter Voltage VBE= 0
-45
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-5
A
75
W
150
â
-65~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
1.67 â/W
Thermal Resistance, Junction to Ambient 70 â/W
isc Websiteï¼www.iscsemi.cn
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