BD705 Datasheet, PDF (1/2 Pages) STMicroelectronics – NPN POWER TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD705
DESCRIPTION
·DC Current Gain -
: h_FE = 40(Min.)@ I_C= 0.5A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 45V(Min.)
·Complement to Type BD706
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
45
V
V_CES
Collector-Emitter Voltage V_BE= 0
45
V
V_CEO
Collector-Emitter Voltage
45
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
12
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
5
A
75
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
1.67 ℃/W
Thermal Resistance, Junction to Ambient 70 ℃/W
isc Website：www.iscsemi.cn