BD684 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SILICON DARLINGTON POWER TRANSISTORS

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BD684
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -120V
·DC Current Gain—
: hFE = 750(Min) @ IC= -1.5 A
·Complement to Type BD683
APPLICATIONS
·Designed for audio and video output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-6
A
IB
Base Current
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
-0.1
A
40
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 3.12 ℃/W
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