BD676 Datasheet, PDF (1/3 Pages) Motorola, Inc – Plastic Medium-Power Silicon PNP Darlingtons

Inchange Semiconductor
Silicon PNP Darligton Power Transistors
Product Specification
BD676/BD678/BD680
DESCRIPTION
With TO-126 package
Complement to type BD675/BD677/BD679
DARLINGTON
High DC current gain
APPLICATIONS
For use as output devices in
complementary general–purpose
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD676
V_CBO
Collector-base voltage BD678
BD680
BD676
V_CEO
Collector-emitter voltage BD678
BD680
V_EBO
Emitter -base voltage
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-45
-60
-80
-45
-60
-80
-5
-4
-0.1
40
150
-55~150
UNIT
V
V
V
A
A
W
MAX
3.13
UNIT
/W