BD675 Datasheet, PDF (1/3 Pages) Motorola, Inc – Plastic Medium-Power Silicon NPN Darlingtons

Inchange Semiconductor
Silicon NPN Darligton Power Transistors
Product Specification
BD675/BD677/BD679
DESCRIPTION
With TO-126 package
Complement to type BD676/678/680
DARLINGTON
High DC current gain
APPLICATIONS
For use as output devices in
complementary general–purpose
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD675
V_CBO
Collector-base voltage BD677
BD679
BD675
V_CEO
Collector-emitter voltage BD677
BD679
V_EBO
Emitter -base voltage
I_C
Collector current
I_CM
Collector current-Peak
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
Thermal resistance from junction to ambient
R_{th j-mb}
Thermal resistance from junction to mounting base
VALUE
45
60
80
45
60
80
5
4
7
0.1
40
150
-55~150
UNIT
V
V
V
A
A
A
W
VALUE
100
3.12
UNIT
K/W
K/W