BD648 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BD648
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -80V(Min)
·High DC Current Gain
: h_FE= 750(Min) @I_C= -3A
·Low Saturation Voltage
·Complement to Type BD647
APPLICATIONS
·Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-100
V
V_CEO
Collector-Emitter Voltage
-80
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-8
A
I_CP
Collector Current-Peak
-12
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_a=25℃
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-0.3
A
2
W
62.5
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
2
62.5
℃/W
℃/W
isc Website：www.iscsemi.cn