BD643 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – NPN SILICON DARLINGTON TRANSISTORS

Inchange Semiconductor
Silicon NPN Dalington Power Transistors
Product Specification
BD643
DESCRIPTION
With TO-220C package
Complement to type BD644
DARLINGTON
APPLICATIONS
For use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current-DC
I_CM
Collector current-Pulse
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
45
45
5
8
12
150
62.5
150
-55~150
UNIT
V
V
V
A
A
A
W
MAX
1.5
UNIT
/W