BD550B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors BD550B

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·High Power Dissipation
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 110V(Min)
APPLICATIONS
·Designed for use as either driver or output unit applications
in audio amplifier circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CBO
V_CER
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
R_BE= 100Ω
Collector-Emitter Voltage
275
V
275
V
250
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
7
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
2
A
150
W
200
℃
-65~200 ℃
Product Specification
BD550B
isc Website：www.iscsemi.cn