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BD550 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SILICON TRANSISTOR FOR QUASI - COMPLEMENTARY- SYMMETRY AUDIO AMPLIFIERS
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD550
DESCRIPTION
·High Power Dissipation
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 110V(Min)
APPLICATIONS
·Designed for use as either driver or output unit applications
in audio amplifier circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
VCER
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
130
V
130
V
110
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
2
A
150
W
200
℃
-65~200 ℃
isc Website:www.iscsemi.cn