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BD546C Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector Current -IC= -15A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A
-80V(Min)- BD546B; -100V(Min)- BD546C
·Complement to Type BD545/A/B/C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BD546
-40
BD546A
-60
VCBO
Collector-Base Voltage
V
BD546B
-80
BD546C -100
BD546
-40
VCEO
Collector-Emitter
Voltage
BD546A
-60
V
BD546B
-80
BD546C -100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-15
A
3.5
W
85
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.47 ℃/W
Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W
isc Product Specification
BD546/A/B/C
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark