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| BD545 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector Current -IC= 15A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A
80V(Min)- BD545B; 100V(Min)- BD545C
·Complement to Type BD546/A/B/C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
BD545
40
BD545A
60
VCBO Collector-Base Voltage
V
BD545B
80
BD545C 100
BD545
40
VCEO
Collector-Emitter
Voltage
BD545A
60
V
BD545B
80
BD545C 100
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@ Ta=25â
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
15
A
3.5
W
85
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-c
Thermal Resistance,Junction to Case
1.47 â/W
Thermal Resistance,Junction to Ambient 35.7 â/W
isc Websiteï¼www.iscsemi.cn
isc Product Specification
BD545/A/B/C
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