BD544 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION
·70 W at 25°C Case Temperature
·Complement to Type BD543/A/B/C
·8 A Continuous Collector Current
APPLICATIONS
·Designed for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD544
-40
BD544A
-60
V_CBO
Collector-Base Voltage
V
BD544B
-80
BD544C -100
BD544
-40
BD544A
-60
V_CEO
Collector-Emitter Voltage
V
BD544B
-80
BD544C -100
V_EBO
I_C
I_CM
P_C
T_J
T_stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T_C=25℃
Collector Power Dissipation
@ T_a=25℃
Junction Temperature
Storage Temperature Range
-5
V
-8
A
-10
A
70
W
2
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
4.17 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc Product Specification
BD544/A/B/C
isc Website：www.iscsemi.cn