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BD540C Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD540C
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -0.5A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·Complement to Type BD539C
APPLICATIONS
·Designed for use in medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25â
Collector Power Dissipation
@ TC=25â
Junction Temperature
Storage Temperature Range
-100
V
-5
V
-5
A
2
W
45
150
â
-65~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
2.78 â/W
Thermal Resistance, Junction to Ambient 62.5 â/W
isc Websiteï¼www.iscsemi.cn
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