BD539D Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD539D
DESCRIPTION
·DC Current Gain -
: h_FE = 40(Min.)@ I_C= 0.5A
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 120V(Min)
·Complement to Type BD540D
APPLICATIONS
·Designed for use in medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
120
V
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@ T_a=25℃
Collector Power Dissipation
@ T_C=25℃
Junction Temperature
Storage Temperature Range
120
V
5
V
5
A
2
W
45
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
2.78 ℃/W
Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc Website：www.iscsemi.cn