BD533 Datasheet, PDF (1/3 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD533/535/537
DESCRIPTION
With TO-220C package
Complement to type BD534/536/538
Low saturation voltage
APPLICATIONS
For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD533
V_CBO
Collector-base voltage BD535 Open emitter
BD537
BD533
V_CEO
Collector-emitter voltage BD535 Open base
BD537
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_E
Emitter current
I_B
Base current
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
45
60
80
45
60
80
5
8
8
1
50
150
-65~150
UNIT
V
V
V
A
A
A
W