BD501 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD501/B
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 50V(Min)
80V(Min)
·High Power Dissipation
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD501
55
V_CBO
Collector-Base Voltage
V
BD501B
85
BD501
50
V_CEO
Collector-Emitter Voltage
V
BD501B
80
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
10
A
75
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.39 ℃/W
isc Website：www.iscsemi.cn