BD434 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PNP SILICON EPIBASE TRANSISTORS

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD434/436/438
DESCRIPTION
With TO-126 package
Complement to type BD433/435/437
APPLICATIONS
For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD434
V_CBO
Collector-base voltage BD436
BD438
BD434
V_CEO
Collector-emitter voltage BD436
BD438
V_EBO
Emitter -base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-22
-32
-45
-22
-32
-45
-5
-4
-7
-1
36
150
-65~150
UNIT
V
V
V
A
A
A
W