BD376 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
BD376/378/380
DESCRIPTION
·DC Current Gain-
: h_FE= 20(Min)@ I_C= -1A
·Complement to Type BD375/377/379
APPLICATIONS
·Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD376
-50
V_CBO
Collector-Base Voltage BD378
-75
V
BD380
-100
BD376
-45
V_CEO
Collector-Emitter Voltage BD378
-60
V
BD380
-80
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-2
A
I_CM
Collector Current-Peak
-3
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-1
A
25
W
150
℃
-55~150
℃
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