BD375 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD375/377/379
DESCRIPTION
·DC Current Gain-
: h_FE= 20(Min)@ I_C= 1A
·Complement to Type BD376/378/380
APPLICATIONS
·Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD375
50
V_CBO
Collector-Base Voltage BD377
75
V
BD379
100
BD375
45
V_CEO
Collector-Emitter Voltage BD377
60
V
BD379
80
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
2
A
I_CM
Collector Current-Peak
3
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
1
A
25
W
150
℃
-55~150
℃
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