BD369 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
BD369
DESCRIPTION
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)=-1.0V(Max)@ IC=-10A
·DC Current Gain-
: hFE= 20(Min)@IC=-10A
·Excellent Safe Operating Area
APPLICATIONS
·Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-25
A
ICM
Collector Current-Peak
-50
A
IB
Base Current-Continuous
-7.5
A
PD
Total Power Dissipation @TC=25℃
200
W
Tj
Junction Temperature
-65~200 ℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
0.875
UNIT
℃/W
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