BD338 Datasheet, PDF (1/2 Pages) NXP Semiconductors – SILICON DARLINGTON POWER TRANSISTORS

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
BD338
DESCRIPTION
·High DC Current Gain
·Complement to type BD337
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·PNP epitaxial base transistors in monolithic Darlington
circuit for audio output stages and general amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
IBM
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Peak
Collector Power Dissipation
@ TC=25℃
Junction Temperature
Storage Temperature Range
-120
V
-120
V
-6
V
-6
A
-0.15
A
60
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.08 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W
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